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AH215
Product Features
* 400 - 2300 MHz * +31.5 dBm P1dB * +46 dBm Output IP3 * 18 dB Gain @ 900 MHz * +5V Single Positive Supply * MTTF > 100 Years
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Product Description
The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.
Functional Diagram
1 8
2
7
3
6
4
5
The product is targeted for use as driver amplifier for * Lead-free/green/RoHS-compliant various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, SOIC-8 SMT Pkg. where high linearity and high power is required. The internal active bias allows the AH215 to maintain high Applications linearity over temperature and operate directly off a +5 V supply.
* Final stage amplifiers for Repeaters * Mobile Infrastructure
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance (4)
Units Min
MHz MHz dB dB dB dBm dBm dB dBm dBm mA V 400 400 10 2140 11 18 8 +31.5 +45 6.3 +25.5 +23 450 5 500
Typ
Max
2300
Parameters
Frequency Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB 7.0 900 18 -13 -7 +31 +46 +25.5
Typical
1960 12 -11 -10 +32 +46 +25.5 +23 5.5 6.2 +5 V @ 450 mA 2140 11 -18 -8 +31.5 +45
+29 +43.8
wCDMA Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Noise Figure Supply Bias
Operating Current Range , Icc (3) Device Voltage, Vcc
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 C -65 to +150 C +26 dBm +8 V 900 mA 5W +250 C
Rating
Ordering Information
Part No.
AH215-S8G AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140
Description
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 7 September 2005
AH215
40 35 30 25 Gain (dB) 20 15
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads)
Typical Device Data
S11
1.0
6 0.
0.8
1.0
Gain and Maximum Stable Gain
DB(|S[2,1]|) DB(GMax)
0. 4
S22
6 0.
Swp Max 5.05GHz
2. 0
Swp Max 5.05GHz
2. 0
0.8
0. 4
3.
0
0 3.
0 4.
0.2
0 4.
5.0
5.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.4 -0
.4 -0
.0 -2
-0 .6
-0 .6
-0.8
.0 -2
-0.8
Swp Min 0.05GHz
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 - 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82
-177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68
24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09
122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99
-1.0
-40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37
17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22
-1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92
-1.0
-130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014" Getek, 4 total layers (0.062" thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 7 September 2005
-4 .0 -5. 0
-3 .0
-4 .0 -5 .0
2 -0.
2 -0.
Swp Min 0.05GHz
-1 0.0
-10.
0
-3 .
0
0.2
10.0
10 .0
AH215
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH215-S8PCB900)
Typical RF Performance at 25 C
900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm +25.5 dBm 7.0 dB +5 V 450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency (MHz)
20 18 S 2 1 (d B ) S 1 1 (d B ) 16 14 12 10 8 840 +25C +85C -40C 860 880 900 920 940 0 -4 -8 -12 -16 -20 840
S11 vs. Frequency
0 -4 S 2 2 (d B ) -8 -12 -16 -20 840
S22 vs. Frequency
+25C +85C -40C 860 880 900 920 940
+25C +85C -40C 860 880 900 920 940
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10 9 8 7 6 5 840 +25C +85C -40C 860 880 900 920 940
P 1 d B (d B m ) 34 32
P1 dB vs. Frequency
-40 -45 A C P R (d B c )
30 28 26 24 840 +25C +85C -40C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 KHz offset, 30 KHz Meas BW, 900 MHz
+25C +85C -40C
N F (d B )
-50 -55 -60 -65
860
Frequency (MHz)
880 900 Frequency (MHz)
920
940
-70 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25C
OIP3 vs. Temperature
freq. = 900, 901 MHz, +15 dBm
OIP3 vs. Frequency
+25C, +15 dBm / tone
50 47 O IP 3 (d B m ) 44 41 38 35 10 13 16 19 Output Power (dBm) 22 25
50 47 O IP 3 (d B m )
O IP 3 (d B m )
50 47 44 41 38 35 840
44 41 38 35 -40 -15 10 35 Temperature (C ) 60 85
860
880 900 Frequency (MHz)
920
940
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 7 September 2005
AH215
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (AH215-S8PCB1960)
Typical RF Performance at 25 C
1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm +25.5 dBm 5.5 dB +5 V 450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
18 16 S 2 1 (d B )
S11 vs. Frequency
0 -5 -10 -15 -20 +25C +85C -40C S 2 2 (d B ) S 1 1 (d B ) 0 -5 -10 -15 -20 -25 1930
S22 vs. Frequency
14 12 10 8 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990
+25 C +85 C -40C 1940 1950 1960 1970 1980 1990
-25 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
8 7 N F (d B ) 5 4 3 2 1 0 1930 1940 +25C +85C -40C 1950 1960 1970 1980 1990 P 1 d B (d B m ) 6 35 33
P1 dB vs. Frequency
-40 -45 -50 -55 -60 -65 -70 -75 -80 -85
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. 885 KHz offset, 30 KHz Meas BW, 1960 MHz
A C P R (d B c )
31 29 27 25 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990
+25C +85C -40C
Frequency (MHz)
Frequency (MHz)
15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm)
OIP3 vs. Frequency
+25C, 15 dBm / tone
OIP3 vs. Temperature
freq. = 1960, 1961 MHz, +15 dBm
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25C
55 50 O IP 3 (d B m ) 45 40 35 1930
55 51 O IP 3 (d B m ) -40 -15 10 35 Temperature ( C) 60 85 47 43 39 1940 1950 1960 1970 1980 1990 35
50 46 42 38 34 30 10 12 14 16 18 Output Power (dBm) 20 22
O IP 3 (d B m )
Frequency (MHz)
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 7 September 2005
AH215
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH215-S8PCB2140)
Typical RF Performance at 25 C
2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm +23 dBm 6.2 dB +5 V 450 mA
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15 12 S 21 (d B) S 11 (d B) 9 6 3 0 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170 -10 -14 -18 -22 -26 -30 2110
S11 vs. Frequency
0 -5 S 22 (d B) -10
S22 vs. Frequency
+25C +85C -40C 2120 2130 2140 2150 2160 2170
+25C -15 -20 2110 +85C -40C 2120 2130 2140 2150 2160 2170
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
9 8 7 6 5 4 3 2 1 0 2110 34 32 P 1 d B (d B m )
P1 dB vs. Frequency
-40 -45 A C P R (d B c )
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, 5MHz offset, 2140 MHz
N F (d B )
30 28 26 24 2110 +25C +85C -40C
-50 -55 -60 +25C +85C -40C
+25C +85C -40C 2120 2130 2140 2150 2160 2170
2120
2130
2140
2150
2160
2170
-65 19 20 21 22 23 Output Channel Power (dBm) 24
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Temperature
50 47 O IP 3 (d B m ) O IP 3 (d B m ) 44 41 38 35 -40 -15 10 35 Temperature (C ) 60 85
freq. = 2140, 2141 MHz, +15 dBm / tone
OIP3 vs. Frequency
+25C, +15 dBm / tone
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25C
50 47 44 41 38 35 2110 O IP 3 (d B m ) 2120 2130 2140 2150 Frequency (MHz) 2160 2170
50 47 44 41 38 35 10 12 14 16 18 Output Power (dBm) 20 22
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 7 September 2005
AH215
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Application Note: Reduced Bias Configurations
The AH215 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH215-S8PCB2140 Performance Data R1 (ohms) 51 68 100 130 180 Icq (mA) 450 400 350 300 250 Pdiss (W) 2.25 2.00 1.75 1.50 1.25 P1dB (dBm) +31.0 +30.9 +30.8 +30.6 +30.5 OIP3 (dBm) +47.1 +46.4 +46.4 +45.5 +43.6
2.14GHz Gain vs. Output Power
11.5 11
2.14GHz OIP3 vs. Output Power per Tone
50
45
10 9.5 9 8.5 16
OIP3 (dBm)
Gain (dB)
10.5
Idq=450mA 'Class A' Idq=400mA Idq=350mA Idq=300mA Idq=250mA
40 Idq=450mA 'Class A' Idq=400mA 35 Idq=350mA Idq=300mA Idq=250mA 30
18
20
22
24
26
28
30
32
10
12
14
16
18
20
22
24
Output Power (dBm) W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset
Power Out per Tone (dBm) CW PAE vs. Output Power
100 Idq=450mA 'Class A' Idq=400mA Idq=350mA
-35
Idq=450mA 'Class A'
-40
Idq=400mA
PAE (%)
Idq=350mA
ACLR (dBc)
-45 -50 -55 -60 -65 12
Idq=300mA Idq=250mA
Idq=300mA Idq=250mA 10
1
14 16 18 20 22 24
16
18
20
22
24
26
28
30
32
W-CDMA Channel Power Out (dBm)
CW Tone Power Out (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 7 September 2005
AH215
The Communications Edge TM Product Information
1 Watt, High Linearity InGaP HBT Amplifier
AH215-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH215G" designator with an alphanumeric lot code on the top surface of the package. The obsoleted tin-lead version will have been marked with an "AH215-S8" or "ECP100G" designator. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Mounting Configuration / Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tjc -40 to +85 C 33 C / W 159 C
M T T F (m illio n h rs )
MTTF vs. GND Tab Temperature
1000000 100000 10000 1000 100 50 60 70 80 90 100 Tab temperature ( C)
Parameter
Rating
Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 450 mA at an 85C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 7 September 2005

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